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| Ordering number : ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features * * * Package Dimensions unit : mm 2190 [2SK3449] 8.0 1.0 1.4 4.0 1.0 3.3 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 3.0 1.5 7.5 1.6 0.8 3.0 0.8 0.75 15.5 11.0 0.7 1 2 3 1.7 Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions 1 : Source 2 : Drain 3 : Gate SANYO : TO-126ML Ratings 60 20 4.8 19.2 1 10 150 --55 to +150 Unit V V A A W W C C 2.4 4.8 Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0 VDS=60V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA Ratings min 60 10 10 1.0 2.4 typ max Unit V A A V Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22201 TS IM TA-2919 No.6672-1/4 2SK3449 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, ID=2.4A ID=2.4A, VGS=10V ID=2.4A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=10V, VGS=10V, ID=4.8A VDS=10V, VGS=10V, ID=4.8A VDS=10V, VGS=10V, ID=4.8A IS=4.8A, VGS=0 Ratings min 2.2 typ 3.2 240 320 110 35 10 6 3.2 16 4.8 4.5 0.9 0.8 1 1.2 320 440 max Unit S m m pF pF pF ns ns ns ns nC nC nC V Switching Time Test Circuit VDD=30V 10V 0V VIN ID=2.4A RL=12.5 VIN PW=10s D.C.1% D G VOUT P.G 50 S 2SK3449 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ID -- VDS 8.0V 5.0V 4. 3.5 0V V 10.0V 3.5 ID -- VGS VDS=10V 3.0V Drain Current, ID -- A 3.0 Drain Current, ID -- A 2.5 2.0 1.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.5 1.0 1.5 2.0 2.5 --2 5 3.0 C 0.5 25 3.5 VGS=2.5V C 1.0 Tc= 75 C 4.0 Drain-to-Source Voltage, VDS -- V 800 IT01212 600 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT01213 RDS(on) -- Tc Static Drain-to-Source On-State Resistance, RDS(on) -- m 700 600 500 400 300 200 100 0 0 2 4 6 8 10 12 14 Static Drain-to-Source On-State Resistance, RDS(on) -- m Tc=25C ID=2.4A 500 400 300 2. I D= 4 VG A, 4V S= 10 S= V I D= 200 , VG 2.4A 100 16 18 20 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V IT01214 Case Temperature, Tc -- C IT01215 No.6672-2/4 2SK3449 10 |yfs| -- ID VDS=10V Forward Transfer Admittance, |yfs| -- S 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IF -- VSD VGS = 0 1.0 7 5 3 2 0.1 0.01 Tc C 5 --2 = 75 C 25 C Forward Current, IF -- A 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT01216 0.01 0.3 0.4 0.5 Tc= 75 0.6 0.7 --25C 0.8 0.1 7 5 C 25C 0.9 1.0 1.1 1.2 1.3 Drain Current, ID -- A 100 7 SW Time -- ID Switching Time, SW Time -- ns 5 3 2 VDD=30V VGS=10V td (off) Ciss, Coss, Crss -- pF 1000 7 5 3 2 Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V IT01217 Ciss 100 7 5 3 2 10 7 5 3 2 1.0 10 7 5 3 2 tf Coss Crss td(on) tr 1.0 7 0.1 2 3 5 7 1.0 2 3 5 0 10 20 30 40 50 60 IT01219 Drain Current, ID -- A 10 9 IT02549 3 2 10 VGS -- Qg Drain-to-Source Voltage, VDS -- V ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=4.8A Drain Current, ID -- A IDP=19.2A <10s 10 0 s 8 7 6 5 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 7 5 3 2 1.0 7 5 3 2 ID=4.8A 1m 10 D C op er 10 s m 0m io s s Operation in this area is limited by RDS(on). Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 at n 0.1 0.1 2 3 Total Gate Charge, Qg -- nC 1.2 IT01220 12 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 5 7 100 IT02450 PD -- Tc Allowable Power Dissipation, PD -- W 1.0 10 0.8 8 0.6 6 0.4 4 0.2 2 0 0 20 40 60 80 100 120 140 160 0 0 20 40 60 80 100 120 140 160 Amibient Tamperature, Ta -- C IT02451 Case Tamperature, Tc -- C IT02452 No.6672-3/4 2SK3449 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. PS No.6672-4/4 |
Price & Availability of 2SK3449
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